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| IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for highpower bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits. Formerly developmental type TA17443. Features * 2.2A, 250V * rDS(ON) = 2.000 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * High Input Impedance * 150oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER IRFR214 IRFU214 PACKAGE TO-252AA TO-251AA BRAND IRFR214 IRFU214 Symbol D G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) 4-383 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRFR214, IRFU214 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFR214, IRFU214 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 250 250 2.2 1.4 8.8 20 25 0.20 61 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC TO 125oC Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS =0.8 x Rated BVDSS, VGS = 0V TJ = 150oC MIN 250 2 TYP MAX 4 25 250 UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF On-State Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 4) Forward Transconductance (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V ID = 1.3A, VGS = 10V (Figure 8) VDS = 50V, IDS = 1.3A VDD = 0.5 x Rated BVDSS, ID 2.7A, RGS = 24, RL = 4.5, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature 2.2 1.1 - 1.6 7.0 7.6 16 7.0 140 42 9.6 100 2.000 10 1.8 5.5 - VGS = 10V, ID 5.6A, VDS = 0.8 x Rated BVDSS, (Figure 11) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 9) - 4-384 IRFR214, IRFU214 Electrical Specifications PARAMETER Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL LD TEST CONDITIONS Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S MIN - TYP 4.5 MAX - UNITS nH Internal Source Inductance LS - 7.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Free Air Operation - - 5.0 110 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 2) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D MIN - TYP - MAX 2.2 8.8 UNITS A A G S Source to Drain Diode Voltage (Note 4) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 2.2A, VGS = 0V(Figure 10) TJ = 25oC, ISD = 2.7A, dISD/dt = 100A/s TJ = 25oC, ISD = 2.7A, dISD/dt = 100A/s 97 0.32 - 2.0 390 1.3 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3) 4. VDD = 50V, starting TJ = 25oC, L = 21mH, RG = 25, peak IAS = 2.2A. Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 2.4 2.0 ID, DRAIN CURRENT (A) 0 50 100 150 0.8 0.6 0.4 0.2 0 1.6 1.2 0.8 0.4 0 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 4-385 IRFR214, IRFU214 Typical Performance Curves 10 Unless Otherwise Specified (Continued) 0.5 ZJC, TRANSIENT THERMAL IMPEDANCE 1 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 0.1 1 10 0.01 10-5 t 1, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 OPERATION IN THIS AREA LIMITED BY rDS(ON) 10 100s ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 15V VGS = 10V VGS = 8V VGS = 7V VGS = 6V 0 10 VGS = 5.5V VGS = 5V BOTTOM VGS = 4.5V 10-1 TOP 1.0 TC = 25oC TJ = MAX RATED SINGLE PULSE 0.1 1 10 100 1ms 10ms PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC 1000 10-1 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS (TC = 25oC) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 15V VGS = 10V VGS = 8V VGS = 7V VGS = 6V 100 VGS = 5.5V VGS = 5V BOTTOM VGS = 4.5V 10-1 TOP 10 1 TJ = 150oC TJ = 25oC 0.1 10-2 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 50V 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 150oC 10-1 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) 10-3 FIGURE 6. OUTPUT CHARACTERISTICS (TC = 150oC) FIGURE 7. TRANSFER CHARACTERISTICS 4-386 IRFR214, IRFU214 Typical Performance Curves 2.5 NORMALIZED DRAIN TO SOURCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 5.6A C, CAPACITANCE (pF) Unless Otherwise Specified (Continued) 500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGS CISS 2.0 ON RESISTANCE 400 1.5 300 1.0 200 COSS 100 CRSS 0.5 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 TJ, JUNCTION TEMPERATURE (oC) 101 VDS, DRAIN TO SOURCE VOLTAGE (V) 102 FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 101 ISD, SOURCE TO DRAIN CURRENT (A) FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V TJ = 150oC TJ = 25oC ID = 2.7A 16 VDS = 200V VDS = 125V VDS = 50V 12 100 8 4 10-1 0.6 0 0.8 1.0 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) 1.4 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 FIGURE 10. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 11. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS 4-387 IRFR214, IRFU214 Test Circuits and Waveforms (Continued) tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD Qg(TOT) VGS 12V BATTERY 0.2F 50k 0.3F SAME TYPE AS DUT Qgs Qgd D G DUT 0 VDS IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-388 |
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